Parameters of the crystalline undulator and its radiation for particular experimental conditions

We report the results of theoretical and numerical analysis of the crystalline undulators planned to be used in the experiments which are the part of the ongoing PECU project [1]. The goal of such an analysis was to define the parameters (different from those pre-set by the experimental setup) of the undulators which ensure the highest yield of photons of specified energies. The calculations were performed for 0.6 and 10 GeV positrons channeling through periodically bent Si and Si$_{1-x}$Ge$_x$ crystals.Comment: 13 pages, 8 figures, submitted to SPI

Channeling process in a bent crystal

We have investigated the channeling process of charged particles in a bent crystal. Invoking simple assumptions we derive a criterion, which determines whether channeling occurs or not. We obtain the same criterion using the Dirac equation. It is shown that the centrifugal force acting on the particle in the bent crystal significantly alters the effective transverse potential. The cases of axial and planar channeling are considered. The channeling probability and the dechanneling probability due to tunneling of the particle under the barrier in the effective transverse potential are estimated. These probabilities depend on the specific scaling parameter characterizing the process. Using the quasiclassical theory of synchrotron radiation we have calculated the contribution to the radiation spectrum, which arises due to the curvature of the channel. This contribution becomes significant to TeV electrons or positrons. Some practical consequences of our results are briefly discussed